Recent catalytic syntheses of trifluoromethylthio-containing organic compounds by transition metals,chiral organocatalysts,and photocatalysts

This review summarizes the recent advances in the catalytic syntheses of CF_3S-containing organic molecules using various nucleophilic or electrophilic trifluoromethylthiolating reagents.C-halogen and C—H bonds in various molecules have been transformed to C—SCF_3 bonds by transition-metal-catalyzed reactions,such as cross-coupling of aryl halides.Enantioselective reactions controlled by chiral metal complexes or chiral organocatalysts have afforded many trifluoromethylthiolated chiral architectures,such as β-ketoesters and oxindoles.Very recently,visible-light-induced photoredox trifluoromethylthiolations have been developed,providing versatile CF_3S-containing structures efficiently.     

A review of transition metal chalcogenide/graphene nanocomposites for energy storage and conversion

Recent advances in the applications of transition metal chalcogenides/graphene (TMC/graphene) nanocomposites in future energy storage and conversion are reviewed. The synthesis processes and structures of TMC/graphene, workingpriciple of evergy energy device, and the electrochemical performances are summarized.     

基于常温无外压的转移印刷技术构筑半球状多级Ag基底

基于自组装技术制备了3种不同粒径的聚苯乙烯微球阵列,并翻制了与微球阵列互补的软模板.基于室温无外压的转移印刷技术制备了聚甲基丙烯酸甲酯半球形微纳阵列,然后基于原位光还原技术在聚甲基丙烯酸甲酯半球表面制备Ag纳米颗粒,构筑了拉曼增强的半球状多级Ag基底.转移印刷技术的关键是利用软模板自身的低表面能和表面羟基化的图案化材料与亲水基底界面间的氢键作用力.     

Zn/SiO_2气相催化裂解1,1,2-三氯乙烷脱HCl:酸性与失活

用浸渍法制备了一系列SiO_2负载的过渡金属催化剂M/SiO_2(M为第Ⅳ周期过渡金属),用于气相催化裂解1,1,2-三氯乙烷(TCE)脱HCl的反应。研究发现,在M/SiO_2催化剂中,Zn/SiO_2催化性能最好,TCE转化率能达到98%,顺-1,2-二氯乙烯(cis-DCE)的选择性为82%。随着Zn负载量的增加,Zn/SiO_2催化剂上TCE转化率逐渐增加,与催化剂上总酸量变化一致。将总酸量以Zn负载量归一化得到比酸量,则比酸量越大,Zn/SiO_2催化剂比活性越高,表明Zn/SiO_2催化剂表面酸性中心是TCE脱氯反应的活性中心。Zn/SiO_2催化剂在TCE脱HCl反应中存在一定的失活现象,归因于反应过程中催化剂表面积炭。低Zn负载量催化剂上会产生较多积炭,归因于其具有较多强酸性中心,表明催化剂表面强酸中心是导致催化剂积炭和失活的主要原因。     

具有高灵敏性且稳定可重复的正温度系数效应的PVDF/CF导电复合材料

以碳纤维(CF)为填料,聚偏氟乙烯(PVDF)为基体,通过熔融共混法制备PVDF/CF导电复合材料.所得复合材料具有显著的正温度系数(PTC)效应,温度上升到聚合物熔点附近时,电阻率对温度变化敏感.在转折温度区间(155.5~171.0oC,(35)(28)15.5oC)内,其体积电阻率的增加速率约为1.3×105?cm K-1.在不同CF含量下,复合材料表现出不同的PTC行为.随着CF含量的增加,其峰值电阻略有下降.高导电粒子含量下,无负温度系数(NTC)效应.在冷却循环过程,导电网络的重构性良好.复合材料即使经过多次热循环,依然表现出良好的PTC特性重现性.     

高分散钴氮共掺杂碳纳米纤维氧还原催化剂

过渡金属氮掺杂碳基催化剂已成为替代铂基氧还原反应(ORR)电催化剂的理想选择。本文通过静电纺丝技术制备了高比表面、高度分散的钴原子配位氮掺杂的碳纳米纤维催化剂(Co-N/C)。X射线衍射(XRD)和高分辨率透射电镜(HRTEM)结果证实Co元素高度分散于制备的Co-N/C催化剂中。X射线光电子能谱结果表明N元素主要以吡啶N和石墨N形式存在。该Co-N/C催化剂对ORR反应呈现出较高的电催化活性,其氧还原起始和半波电位分别为0.92 V和0.80 V(相对于标准氢电极),接近于商业化Pt/C催化剂的性能。以制备的Co-N/C催化剂作为阴极,25℃下锌空气燃料电池的开路电位1.54 V、最大功率密度达到了190 m V·cm~(-2)表明该催化剂具有良好的应用前景。     

考虑底部隆起的浅埋隧道围岩压力计算分析

针对浅埋隧道开挖后底部隆起变形现象,应用极限分析上限法构造了考虑底部隆起变形的围岩压力计算模型,结合线性Mohr-Coulomb准则等推导出极限围岩压力的理论表达式。通过约束条件将围岩压力的计算转化为数学中的最优化问题,编制程序进行了优化计算。将计算结果与工程实测数据及文献计算结果进行了对比,验证了当前方法的可靠性。同时,指出在运用极限分析法处理浅埋隧道围岩压力问题过程中应将隧道底部一同考虑,对隧道底部支护会对整个围岩压力产生影响,有助于隧道结构的整体稳定。研究可以为浅埋隧道的开挖、支护提供一定的理论指导.     

侵入气体沿井筒的上升规律研究

地层气体侵入井筒后形成气液两相流动体系,气体沿井筒向上滑脱运移,随着所受压力的降低其发展变化过程会很快,如果不及时处理就会演变为井涌、井喷,甚至井喷失控.因此,准确的预测侵入气体沿井筒的上升规律,有助于认识气侵发展过程,同时为现场采取井控措施提供理论依据,有效避免井下复杂事故.基于侵入气体沿井筒运动的力学特性,建立了气体的上升速度模型,模型模拟分析表明:地层渗透率越高、机械钻速越快、单位时间内侵入井筒的气体量越多、气体上升速度越快,井底压力波动越大;施加一定的井口回压可以有效抑制气体的膨胀运移.     

Atomically flat single terminated oxide substrate surfaces

Scientific interest in atomically controlled layer-by-layer fabrication of transition metal oxide thin films and heterostructures has increased intensely in recent decades for basic physics reasons as well as for technological applications. This trend has to do, in part, with the coming post-Moore era, and functional oxide electronics could be regarded as a viable alternative for the current semiconductor electronics. Furthermore, the interface of transition metal oxides is exposing many new emergent phenomena and is increasingly becoming a playground for testing new ideas in condensed matter physics. To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achieving the atomically flat and chemically single terminated surface state of commercially available substrates, however, requires judicious efforts because the surface of as-received substrates is of chemically mixed nature and also often polar. In this review, we summarize the surface treatment procedures to accomplish atomically flat surfaces with single terminating layer for various metal oxide substrates. We particularly focus on the substrates with lattice constant ranging from 4.00 Å to 3.70 Å, as the lattice constant of most perovskite materials falls into this range. For materials outside the range, one can utilize the substrates to induce compressive or tensile strain on the films and explore new states not available in bulk. The substrates covered in this review, which have been chosen with commercial availability and, most importantly, experimental practicality as a criterion, are KTaO₃, REScO₃ (RE = Rare-earth elements), SrTiO₃, La_0.18Sr_0.82Al_0.59Ta_0.41O₃ (LSAT), NdGaO₃, LaAlO₃, SrLaAlO₄, and YAlO₃. Analyzing all the established procedures, we conclude that atomically flat surfaces with selective A- or B-site single termination would be obtained for most commercially available oxide substrates. We further note that this topmost surface layer selectivity would provide an additional degree of freedom in searching for unforeseen emergent phenomena and functional applications in epitaxial oxide thin films and heterostructures with atomically controlled interfaces.